PESD24VS2UQ,115【PDF 3/13 页】DIODE ESD PROTECTION SOT663

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NXP Semiconductors

PESDxS2UQ series

Double ESD protection diodes in SOT663 package

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

P PP

peak pulse power

t p = 8/20 μ s

[1][2]

-

150

W

I PP

peak pulse current

t p = 8/20 μ s

[1][2]

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

-

-

-

-

-

15

15

5

5

3

A

A

A

A

A

Per device

T j

T amb

T stg

junction temperature

ambient temperature

storage temperature

-

? 65

? 65

150

+150

+150

° C

° C

° C

[1]

[2]

Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.

Measured across either pins 1 and 3 or pins 2 and 3.

Table 6. ESD maximum ratings

T amb = 25 ° C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

V ESD

electrostatic discharge

voltage

IEC 61000-4-2

(contact discharge)

[1][2]

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

-

-

-

-

-

30

30

30

30

23

kV

kV

kV

kV

kV

PESDxS2UQ series

MIL-STD-883

-

10

kV

(human body model)

[1]

[2]

Device stressed with ten non-repetitive ESD pulses.

Measured across either pins 1 and 3 or pins 2 and 3.

Table 7.

Standard

Per diode

ESD standards compliance

Conditions

PESDXS2UQ_SER_4

IEC 61000-4-2; level 4 (ESD)

MIL-STD-883; class 3 (human body model)

> 15 kV (air); > 8 kV (contact)

> 4 kV

? NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 04 — 26 January 2010

3 of 13

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